Research on the Radiation Effects and Compact Model of SiGe HBT (9789811351815)

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Product details

• Format Paperback | 168 pages
• Dimensions 155 x 235 x 10.41mm | 454g
• Publication date 04 Jan 2019
• Publisher Springer Verlag, Singapore
• Publication City/Country Singapore, Singapore
• Language English
• Edition Statement Softcover reprint of the original 1st ed. 2018
• Illustrations note 171 Illustrations, black and white; XXIV, 168 p. 171 illus.
• ISBN10 9811351813
• ISBN13 9789811351815

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